起因
日前，我国互联网主管部门在对美国知名芯片制造商——镁光公司（Micron）的产品进行审查后做出决定：由于该公司的产品具有严重的网络安全风险，影响了中国的国家安全，因此这些产品将被禁止用于中国的关键基础设施建设项目。
研尚科技针对此次事件，专门整理镁光DRAM芯片产品的替代料，期望可以为广大客户解决产品替代选型时面临的难题。
替代料清单
Synchronous DRAM Cross Reference (3.3v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
16Mb | 1M*16 | V54C316162 | MT48LC1M16 | K4S161622 | HY57V161610E |
64Mb | 4M*16 | V54C365164V | MT48LC4M16 | K4S641632 | HY57V641620ET |
128Mb | 8M*16 | V54C3128164VF | MT48LC8M16 | K4S281632 | H57V1262GTR |
256Mb | 16M*16 | V54C3256164VJ | MT48LC16M16 | K4S561632 | H57V2562GTR |
512Mb | 32M*16 | V54C3512164VJ | MT48LC32M16 | K4S511632 | / |
512Mb | 64M*8 | V54C3512804VK | MT48LC64M8 | / | / |
DDR1 DRAM Cross Reference (2.5v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
128Mb | 8M*16 | V58C2128164 | / | K4H281638D | HY5DU1281622 |
256Mb | 16M*16 | V58C2256164S | MT46V16M16 | K4H561638D | HY5DU561622 |
512Mb | 32M*16 | V58C2512164S | MT46V32M16 | K4H511638D | HY5DU121622 |
1Gb | 64M*16 | V58C2G01164S | MT46V64M16 | / | / |
1Gb | 128M*8 | MT46V128M8P | V58C2G01804S | / | / |
DDR2 DRAM Cross Reference (1.8v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
512Mb | 32M*16 | V59C1512164Q | MT47H32M16HR | K4T51163Q | H5PS5162FFR |
1Gb | 64M*16 | V59C1G01168Q | MT47H64M16H | K4T1G164QF | H5PS1G63JFR |
1Gb | 128M*8 | V59C1G01808Q | MT47H128M8H | K4T1G084QF | H5PS1G83EFR |
2Gb | 128M*16 | V59C1G02168QC | MT47H128H16RT | / | / |
2Gb | 256M*8 | V59C1G02808QD | MT47H256H8RT | / | / |
Mobile SDRAM Cross Reference (1.8v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
128Mb | 8M*16 | / | MT48H8M16LFB4 | / | HY5S2B6DLF(P) |
256Mb | 16M*16 | / | MT48H16M16LFB4 | K4M56323PI | H55S2562NFR |
512Mb | 32M*16 | V55C151216VA | MT48H32M16LFB4 | / | H55S5162EFR |
512Mb | 16M*32 | V55C151232VA | MT48H16M32LFB5 | K4M51323PG | H55S5122EFR |
Mobile DDR Cross Reference (1.8v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
512Mb | 32M*16 | V56C1512164MEJ | MT46H32M16LF | K4X51163PK | H5MS5162FFR |
512Mb | 16M*32 | V56C1512324MEJ | MT46H16M32LF | K4X51323PK | H5MS5122FFR |
1Gb | 64M*16 | V56C1G01164MCJ | MT46H64M16LF | K4X1G163PE | H5MS1G62MFP |
1Gb | 32M*32 | V56C1G01324MDJ | MT46H32M32LF | K4X1G323PE | H5MS1G22MFP |
2Gb | 64M*32 | V56C1G02324MCP | MT46H128M16LF | K4X2G323PB | H5MS2G22BFR |
DDR3 DRAM Cross Reference (1.5v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
1Gb | 64M*16 | V73CAG01168RDJ | MT41J64M16JT | K4B1G1646G-BCF | H5TQ1G63DFR |
1Gb | 128M*8 | V73CAG01808RDJ | MT41J128M8JP | K4B1G0846G-BCF | H5TQ1G83DFR |
2Gb | 128M*16 | V73CAG02168RCJ | MT41J128M16JT | K4B2G1646E-BCF | H5TQ2G63BFR |
2Gb | 256M*8 | V73CAG02808RCJ | MT41J256M8DA | K4B2G0846D-BCF | H5TQ2G83EFR |
4Gb | 256M*16 | V73CAG04168RCJ | MT41J256M16HA | K4B4G1646B-BCF | H5TQ4G63AFR |
4Gb | 512M*8 | V73CAG04808RCJ | MT41J512M8RH | K4B4G0846B-BCF | H5TQ4G83AFR |
8Gb | 512M*16 | V73CAG08168RCP/M | MT41J512M16HA | / | / |
8Gb | 1G*8 | V73CAG08808RCP/M | MT41J1G8TRF(SN) | / | / |
DDR3 DRAM Cross Reference (1.35v)
Den | ORG | PROMOS | MICRON | SAM SUNG | SK HYNIX |
1Gb | 64M*16 | V73CBG01168RDJ | MT41K64M16J | K4B1G1646G- | H5TC1G63DFR |
1Gb | 128M*8 | V73CBG01808RDJ | / | K4B1G0846G- | H5TC1G83DFR |
2Gb | 128M*16 | V73CBG02168RCJ | MT41K128M16J | K4B2G1646E- | H5TC2G63BFR |
2Gb | 256M*8 | V73CBG02808RCJ | MT41K256M8D | K4B2G0846D- | H5TC2G83EFR |
4Gb | 256M*16 | V73CBG04168RCJ | MT41K256M16H | K4B4G1646B- | H5TC4G63AFR |
4Gb | 512M*8 | V73CBG04808RCJ | MT41K512M8R | K4B4G0846B- | H5TC4G83AFR |
8Gb | 512M*16 | V73CBG08168RCP/M | MT41K512M16H | / | / |
8Gb | 1G*8 | V73CBG08808RCP/M | MT41K1G8TRF | / | / |
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茂德科技股份有限公司是全球知名动态随机存取记忆体 (DRAM)设计、研发、制造及行销公司，1996年12月成立，总部位於台湾新竹科学工业园区。1999年以科技类股票在台湾挂牌上柜，员工人数约4000人，资本额为新台币柒佰贰拾陆亿元。研尚科技是茂德科技在华的核心合作伙伴，如需了解更多茂德DRAM产品信息，欢迎随时与我们联系。
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